epitaxial film
英
美
外延膜；取向附生膜
双语例句
- Lateral epitaxial overgrowth GaN thin film with MOCVD
MOCVD法横向外延过生长GaN薄膜 - Study on electronic paramagnetic resonance and transport properties of the bi-layered la_ ( 1.4) sr_ ( 1.6) mn_2o_7 epitaxial film
La（1.4）Sr（1.6）Mn2O7双层结构外延膜电子顺磁共振和输运性质 - Preparation and Magnetic Properties of Perovskite-type La_ ( 2/ 3) Pb_ ( 1/ 3) MnO_3 Epitaxial Thin Film
钙钛矿La（2/3）Pb（1/3）MnO3外延膜的制备及磁性 - Assessment of epitaxial silicon film on sapphire ( or spinel) by reflection spectrum
用反射光谱鉴定蓝宝石（或尖晶石）衬底上外延硅膜 - The Preparation of Epitaxial Silicon Film on Czochralski Method Spinel
在直拉法尖晶石上外延硅膜的研制 - The quality of epitaxial poly-crystalline silicon thin film is affected remarkably by the substrates.
衬底的表面质量对外延薄膜有着显著的影响。 - Observation of defects in β-silicon carbide epitaxial film
β&SiC外延层中晶体缺陷的观察 - A Capacitance Method for Measuring the Resistivity of Silicon Epitaxial Film with Uniform Doping
均匀掺杂硅外延层电阻率的电容测量法 - Study of real time monitoring epitaxial thin film growth
外延薄膜生长的实时监测分析研究 - Large Area Double-sided YBCO Epitaxial Superconducting Thin Film
大面积双面外延YBCO超导薄膜研制 - Field Emission Properties of Epitaxial Diamond Film
外延纳米金刚石膜及其场发射特性 - A study of the movement of the flux lines in yba_2cu_3o_ ( 7-δ) epitaxial film
YBa2Cu3O（7-δ）外延薄膜中磁通运动的研究 - It was shown that ( 001) LiGaO_2 ∥( 100) β-Ga_2O_3 composite substrate for GaN-based epitaxial film could be fabricated by VTE technique at the temperature lower than the melting point of LiGaO_2.
表明可以通过气相传输平衡技术技术，在远低于LiGaO2熔点的温度制备外延GaN用（001）LiGaO2‖（100）β-Ga2O3复合衬底。 - Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
从外延形貌照片中观察到了外延生长台及生长螺线。 - In this study, SiGe HBT MMIC research was done for the first time in China. A series of efforts was made on SiGe HBT MMIC including UHV/ CVD SiGe epitaxial machine, SiGe film characteristics, process improvements, circuit design and fabrication.
本论文在国内首先进行了SiGeHBT微波单片放大电路的研究，开展了从外延设备、材料特性、工艺改进到电路设计和制作的一系列研究工作。 - Residual stress in the GaN epitaxial film prepared by in situ SiN_x deposition
使用SiNx原位淀积方法生长的GaN外延膜中的应力研究 - Experimental Research on the growth Temperature and Quality of Epitaxial Diamond Film
金刚石薄膜外延生长温度与外延膜品质的研究 - The study of epitaxial growth ZnO thin film on a ( 0112) sapphire substrate
用微波ECR等离子体溅射法在蓝宝石（0112）晶面上生长ZnO薄膜的研究 - So the second task is to research detailedly the grow of epitaxial LCMO film and structure characteristic and the relation between structure and characteristic.
所以本研究的第二大任务就是对LCMO巨磁阻薄膜的定向生长、结构特性分析以及结构与特性间的关系进行了较为详细的研究。 - The results show that ( 1) An epitaxial film can maintain dislocation-free if its surface maintain flat at atomic scale, even when it is tens times thicker than its critical thickness.
保持表面原子级平整可使薄膜在超过临界厚度数十倍的情况下仍不形成失配位错。 - We deposit AlN by using radio-frequency magnetron sputtering which shows a good epitaxial film with ( 101) orientation.
又利用射频磁控溅射工艺制备了取向较好的AlN薄膜。 - Spiral growth was observed on the ( 100) face of the above obtained homogeneous epitaxial diamond film.
并通过拉曼散射，扫描电镜、反射高能电子衍射对实验结果进行了检测分析，在（100）面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。 - A Gettering Process of Microdefects in the silicon Epitaxial Film with C_2HCl_3 Oxidation to Remove the Surface Layer
用三氯乙烯氧化剥层吸除硅外延层微缺陷 - The defects in β-SiC epitaxial film are studied by means of etching method.
用腐蚀法研究了β-SiC外延层中的晶体缺陷。 - The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。 - By light-assisted electrochemical wet-etching of the sample, and the results showed that KOH solution can be laterally etched GaN epitaxial film. But the etching liquid also damage the InGaN/ GaN multiple quantum wells ( MQWs). 2.
利用光辅助电化学湿法对样品刻蚀，结果表明：KOH溶液能够侧向刻蚀GaN外延膜，但是刻蚀液会损伤InGaN/GaN量子阱层。 - There are a lot of process parameters need to be monitored in the procedures, such as temperature 、 growth rate 、 the curvature of substrate; Temperature is the most important parameter, which directly affects the quality and characteristics of the silicon epitaxial film growth.
其工艺过程中有很多工艺参数需要监控，如温度、生长速率、衬底片翘曲度等；其中温度控制是最重要的一项参数，它直接影响了芯片外延膜生长的质量和特性。 - The features during the evolution process of epitaxial film are described by the morphologies, misfits and crystal lattice structure.
在外延层薄膜演化过程的特征由微观组织形貌、失配位错、晶体点阵结构来描述。 - In this paper, the three-dimensional molecular dynamics simulation is used to study the deposition process of the thin epitaxial film of Cu/ Ni ( 111) and Ni/ Cu ( 111), the SC-EAM many-body potential function is used to calculate the interatomic forces.
本文以111外延生长Cu/Ni薄膜和Ni/Cu薄膜为对象，采用三维分子动力学模拟方法，原子间作用力采用SC-EAM多体势函数，利用建立的分子动力学模型和模拟方法，对薄膜的沉积过程进行了模拟研究。 - Secondly, Highly oriented CeO2 buffer layers are prepared on Si ( 001) substrates by PLD technology using two-step growth method, which establish the foundation for the Si-based epitaxial BST thin film.
然后，采用两步生长法应用PLD技术在Si（001）衬底上可以制备出高度择优取向的CeO2缓冲层，为制备Si基外延BST薄膜奠定了基础。